ULTRAVIOLET PHOTOLUMINESCENCE FROM UNDOPED AND ZN DOPED ALXGA1-XN WITH X BETWEEN 0 AND 0.75

被引：43

作者：

LEE, HG ^{[1
]}

GERSHENZON, M ^{[1
]}

GOLDENBERG, BL ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 08期

关键词：

ALXGA1-XN; PHOTOLUMINESCENCE; TIME RESOLVED SPECTROSCOPY;

D O I：

10.1007/BF02669527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The origin of the abrupt decrease with x both in electron concentration and in mobility of Al(x)Ga1-xN in the range of x between 0.4 and 0.6 was investigated by photoluminescence from epitaxial layers covering the entire range of alloy composition. Band edge luminescence from undoped layers was observed out to an x value of 0.75. When x was larger than 0.2, a peak 0.2-0.5 eV below the band edge peak was also observed both from undoped and from Zn doped samples. This is tentatively ascribed to an unidentified acceptor (or acceptors) related to the presence of Al. No luminescence which could be attributed to a deep native donor defect was observed in semi-insulating Al(x)Ga1-xN layers. When Zn was added in the low x range of the alloys, a broad band 0.5-0.8 eV below the band edge peak was observed as well as a relatively narrow peak.

引用

页码：621 / 625

页数：5

共 18 条

[1]

BARANOV BV, 1982, SOV PHYS SEMICOND+, V16, P819

[2]

CHUNG BC, 1986, THESIS U SO CALIFORN

[3] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J].

DINGLE, R ;

ILEGEMS, M .

SOLID STATE COMMUNICATIONS, 1971, 9 (03) :175-&

[4]

GERSHENZON M, 1981, 1981 P INT OPT WORKS, P55

[5]

GOLDENBERG BL, 1986, J ELECTRON MATER, V15, P298

[6] GROWTH AND PROPERTIES OF GAXAL1-XN COMPOUNDS [J].

HAGEN, J ;

METCALFE, RD ;

WICKENDEN, D ;

CLARK, W .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (04) :L143-L146

[7] PROPERTIES AND ION-IMPLANTATION OF ALXGA1-XN EPITAXIAL SINGLE-CRYSTAL FILMS PREPARED BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KHAN, MA ;

SKOGMAN, RA ;

SCHULZE, RG ;

GERSHENZON, M .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :492-494

[8] BEHAVIOR OF ZN AS DOPANT IN THE PHOTOLUMINESCENCE OF ALXGA1-XN [J].

KHAN, MRH ;

KOIDE, Y ;

SAWAKI, N ;

AKASAKI, I .

SOLID STATE COMMUNICATIONS, 1986, 57 (01) :17-20

[9]

KHAN MRH, 1986, SOLID STATE COMMUN, V60, P5091

[10]

KOBAYASHI A, 1983, PHYS REV B, V28, P956

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