HIGH-SPEED AND LOW-DARK-CURRENT FLIP-CHIP INALAS/INALGAAS QUATERNARY WELL SUPERLATTICE APDS WITH 120 GHZ GAIN-BANDWIDTH PRODUCT

被引：42

作者：

WATANABE, I ^{[1
]}

SUGOU, S ^{[1
]}

ISHIKAWA, H ^{[1
]}

ANAN, T ^{[1
]}

MAKITA, K ^{[1
]}

TSUJI, M ^{[1
]}

TAGUCHI, K ^{[1
]}

机构：

[1] OPTOELECTR RES LABS,KAWASAKI,KANAGAWA,JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 06期

关键词：

D O I：

10.1109/68.219707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-speed flip-chip InAlAs/InAlGaAs quaternary well superlattice avalanche photodiodes grown by gas-source molecular beam epitaxy have been achieved with 120 GHz gain-bandwidth product. These photodiodes exhibited a maximum bandwidth of 15 GHz, 0.34 muA dark current at a multiplication factor 20, a capacitance of 0.17 pF, 65% quantum efficiency, and a low breakdown voltage of about 20 V. A clear eye opening at a multiplication factor of 20 was obtained for 10 Gb/s NRZ signals. This indicates that these devices have potential for high-speed, high-sensitivity, and low-power-consumption, long-wavelength optical receivers.

引用

页码：675 / 677

页数：3

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