IMPACT IONIZATION RATES IN (100) AL0.48IN0.52AS

被引：46

作者：

WATANABE, I

TORIKAI, T

MAKITA, K

FUKUSHIMA, K

UJI, T

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Kawasaki 213, Miyazaki

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 10期

关键词：

D O I：

10.1109/55.62988

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Impact ionization rates for electrons and holes in (100) Al048In0.52As were determined from photomultiplication measurements using AlInAs / GaIn As p +-i-n diodes grown by metal-organic vapor phase epitaxy (MOVPE). The impact ionization rate ratio (α /β) was derived as being 2.0 ~ 3.5 over the electric field range from 400 to 650 kV / cm. Ionization rates were found to be smaller than those previously reported. © 1990 IEEE

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页码：437 / 438

页数：2

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