共 27 条
- [1] LOW-LOSS RIDGE OPTICAL WAVE-GUIDES IN QUATERNARY INGAALAS/INP GROWN BY MBE[J]. ELECTRONICS LETTERS, 1987, 23 (05) : 235 - 236CINGUINO, PGENOVA, FMORASCA, SRIGO, CSTANO, A
- [2] MONOLITHIC INTEGRATED INGAALAS INP RIDGE WAVE-GUIDE PHOTODIODES FOR 1.55-MU-M OPERATION GROWN BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1987, 50 (21) : 1515 - 1517CINGUINO, PGENOVA, FRIGO, CCACCIATORE, CSTANO, A
- [3] Davies J., UNPUB
- [4] IMPROVEMENTS IN THE STRUCTURAL QUALITY OF AL0.48IN0.52AS GROWN BY LOW-PRESSURE METAL ORGANIC VAPOR-PHASE EPITAXY[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (03) : 223 - 226DAVIES, JIHODSON, PDMARSHALL, ACSCOTT, MDGRIFFITHS, RJM
- [5] INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS GROWN BY ATMOSPHERIC-PRESSURE MOCVD[J]. ELECTRONICS LETTERS, 1985, 21 (02) : 60 - 62DUPUIS, RDTEMKIN, HHOPKINS, LC
- [6] COMPOSITION AND LATTICE-MISMATCH MEASUREMENT OF THIN SEMICONDUCTOR LAYERS BY X-RAY-DIFFRACTION[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4154 - 4158FEWSTER, PFCURLING, CJ
- [7] MBE GROWTH OF INGAALAS LATTICE-MATCHED TO INP BY PULSED MOLECULAR-BEAM METHOD[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (03): : L254 - L256FUJII, TNAKATA, YSUGIYAMA, YHIYAMIZU, S
- [8] MOLECULAR-BEAM EPITAXY GROWTH OF IN0.53(GAXAL1-X)0.47AS QUATERNARY LAYERS FOR OPTOINTEGRATED DEVICES[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 811 - 814GENOVA, FMORELLO, GRIGO, C
- [9] MBE GROWTH OF ALXGAYIN1-X-YAS FOR A DHBT STRUCTURE[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 396 - 399GOLDSTEIN, LPRASEUTH, JPJONCOUR, MCPRIMOT, JHENOC, PPELOUARD, JLHESTO, P
- [10] THE INTERPRETATION OF X-RAY ROCKING CURVES FROM III-V SEMICONDUCTOR-DEVICE STRUCTURES[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) : 523 - 531HALLIWELL, MAGLYONS, MHHILL, MJ