MOLECULAR-BEAM EPITAXY GROWTH OF IN0.53(GAXAL1-X)0.47AS QUATERNARY LAYERS FOR OPTOINTEGRATED DEVICES

被引：11

作者：

GENOVA, F

MORELLO, G

RIGO, C

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583758

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：811 / 814

页数：4

共 6 条

[1] X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS [J].

BARTELS, WJ ;

NIJMAN, W .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :518-525

[2] LOW DARK CURRENT INGAAS PIN PHOTODIODES GROWN BY MOLECULAR-BEAM EPITAXY [J].

CINGUINO, P ;

GENOVA, F ;

RIGO, C ;

STANO, A .

ELECTRONICS LETTERS, 1985, 21 (04) :139-140

[3] EFFECT OF INP SUBSTRATE THERMAL-DEGRADATION ON MBE INGAAS LAYERS [J].

GENOVA, F ;

PAPUZZA, C ;

RIGO, C ;

STANO, S .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :635-638

[4] X-RAY DOUBLE-CRYSTAL CHARACTERIZATION OF HIGHLY PERFECT INGAAS INP GROWN BY VAPOR-PHASE EPITAXY [J].

MACRANDER, AT ;

STREGE, KE .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :442-446

[5] OPTICAL WAVE-GUIDES IN IN0.52AL0.48AS GROWN ON INP BY MBE [J].

RITCHIE, S ;

SCOTT, EG ;

RODGERS, PM .

ELECTRONICS LETTERS, 1986, 22 (20) :1066-1068

[6] CHEMICAL BEAM EPITAXIAL-GROWTH OF EXTREMELY HIGH-QUALITY INGAAS ON INP [J].

TSANG, WT ;

DAYEM, AH ;

CHIU, TH ;

CUNNINGHAM, JE ;

SCHUBERT, EF ;

DITZENBERGER, JA ;

SHAH, J ;

ZYSKIND, JL ;

TABATABAIE, N .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :170-172

← 1 →