LOW DARK CURRENT INGAAS PIN PHOTODIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引：6

作者：

CINGUINO, P

GENOVA, F

RIGO, C

STANO, A

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 04期

关键词：

D O I：

10.1049/el:19850099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：139 / 140

页数：2

相关论文

共 13 条

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