THE INTERPRETATION OF X-RAY ROCKING CURVES FROM III-V SEMICONDUCTOR-DEVICE STRUCTURES

被引：202

作者：

HALLIWELL, MAG ^{[1
]}

LYONS, MH ^{[1
]}

HILL, MJ ^{[1
]}

机构：

[1] UNIV DURHAM,DEPT PHYS,DURHAM DH1 3HP,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 02期

关键词：

D O I：

10.1016/0022-0248(84)90459-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：523 / 531

页数：9

共 16 条

[1]

[Anonymous], 1974, INT TABLES XRAY CRYS, VIV

[2] APPLICATION OF DYNAMIC THEORY OF X DIFFRACTION IN STUDY OF BORON DIFFUSION AND OF PHOSPHORUS DIFFUSION IN SILICON CRYSTALS [J].

BURGEAT, J ;

TAUPIN, D .

ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1968, A 24 :99-&

[3] VAPOR-PHASE HETERO-EPITAXY - GROWTH OF GAINAS LAYERS [J].

CHATTERJEE, AK ;

FAKTOR, MM ;

LYONS, MH ;

MOSS, RH .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (03) :591-604

[4] DETERMINATION OF STRAIN DISTRIBUTIONS FROM X-RAY BRAGG REFLECTION BY SILICON SINGLE-CRYSTALS [J].

FUKUHARA, A ;

TAKANO, Y .

ACTA CRYSTALLOGRAPHICA SECTION A, 1977, 33 (JAN1) :137-142

[5] ASSESSMENT OF EPITAXIAL LAYERS BY AUTOMATED SCANNING DOUBLE AXIS DIFFRACTOMETRY [J].

HALLIWELL, MAG ;

LYONS, MH ;

TANNER, BK ;

ILCZYSZYN, P .

JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) :672-678

[6]

HALLIWELL MAG, 1981, I PHYS C SER, V60, P271

[7]

HALLIWELL MAG, 1983, I PHYS C SER, V67, P365

[8]

HILL MJ, UNPUB J APPL CRYST

[9]

HSIEH JJ, 1980, HDB SEMICONDUCTORS, V3, P415

[10] X-RAY STUDY OF LATTICE STRAIN IN BORON IMPLANTED LASER ANNEALED SILICON [J].

LARSON, BC ;

BARHORST, JF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3181-3185

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