ASSESSMENT OF EPITAXIAL LAYERS BY AUTOMATED SCANNING DOUBLE AXIS DIFFRACTOMETRY

被引：10

作者：

HALLIWELL, MAG

LYONS, MH

TANNER, BK

ILCZYSZYN, P

机构：

[1] UNIV DURHAM,DEPT PHYS,DURHAM DH1 3LE,ENGLAND

[2] BEDE SCI INSTRUMENTS LTD,DURHAM,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 65卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(83)90117-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：672 / 678

页数：7

共 6 条

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HARTMANN, I .

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[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :607-609

[3] HIGH-PURITY INP AND INGAASP GROWN BY LIQUID-PHASE EPITAXY [J].

COOK, LW ;

TASHIMA, MM ;

TABATABAIE, N ;

LOW, TS ;

STILLMAN, GE .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :475-484

[4]

HALLIWELL MAG, 1981, I PHYS C SER, V60, P271

[5]

HALLIWELL MAG, 1983, I PHYS C SER, V67, P365

[6]

Hart M., 1980, Characterization of Crystal Growth Defects by X-Ray Methods. Proceedings of the NATO Advanced Study Institute on Characterization of Crystal Growth Defects by X-Ray Methods, P474

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