HIGH-PURITY INP AND INGAASP GROWN BY LIQUID-PHASE EPITAXY

被引：44

作者：

COOK, LW

TASHIMA, MM

TABATABAIE, N

LOW, TS

STILLMAN, GE

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90467-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：475 / 484

页数：10

共 19 条

[1] INCORPORATION OF SI IN LIQUID-PHASE EPITAXIAL INP LAYERS [J].

BAUMANN, GG ;

BENZ, KW ;

PILKUHN, MH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) :1232-1235

[2] INGAASP P-I-N PHOTO-DIODES WITH LOW DARK CURRENT AND SMALL CAPACITANCE [J].

BURRUS, CA ;

DENTAI, AG ;

LEE, TP .

ELECTRONICS LETTERS, 1979, 15 (20) :655-657

[3] VARIATION OF THE THICKNESS AND COMPOSITION OF LPE INGAASP, INGAAS, AND INP LAYERS GROWN FROM A FINITE MELT BY THE STEP-COOLING TECHNIQUE [J].

COOK, LW ;

TASHIMA, MM ;

STILLMAN, GE .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :119-140

[4]

EASTMAN LF, 1980, 1980 P NATO SPONS IN, P117

[5] LATTICE-CONSTANT, BANDGAP, THICKNESS, AND SURFACE-MORPHOLOGY OF INGAASP-INP LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, SUPERCOOLING AND 2-PHASE-SOLUTION GROWTH TECHNIQUES [J].

FENG, M ;

COOK, LW ;

TASHIMA, MM ;

STILLMAN, GE .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) :241-280

[6] FIELD-DEPENDENT CENTRAL-CELL CORRECTIONS IN GAAS BY LASER SPECTROSCOPY [J].

FETTERMAN, HR ;

LARSEN, DM ;

STILLMAN, GE ;

TENNENWA.PE ;

WALDMAN, J .

PHYSICAL REVIEW LETTERS, 1971, 26 (16) :975-+

[7] PERFORMANCE OF INXGA1-XASYP1-Y PHOTO-DIODES WITH DARK CURRENT LIMITED BY DIFFUSION, GENERATION RECOMBINATION, AND TUNNELING [J].

FORREST, SR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :217-226

[8] LIQUID-PHASE EPITAXIAL-GROWTH OF INP AND INGAASP ALLOYS [J].

GROVES, SH ;

PLONKO, MC .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :81-87

[9]

GROVES SH, 1979, I PHYS C SER, V45, P71

[10]

HICKS HGB, 1971, I PHYS C SER, V9, P92

← 1 2 →