VARIATION OF THE THICKNESS AND COMPOSITION OF LPE INGAASP, INGAAS, AND INP LAYERS GROWN FROM A FINITE MELT BY THE STEP-COOLING TECHNIQUE

被引：16

作者：

COOK, LW

TASHIMA, MM

STILLMAN, GE

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 01期

关键词：

D O I：

10.1007/BF02654905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：119 / 140

页数：22

共 10 条

[1]

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[2] INTERFACE GRADING IN INGAASP LIQUID-PHASE EPITAXIAL HETEROSTRUCTURES [J].

COOK, LW ;

FENG, M ;

TASHIMA, MM ;

BLATTNER, RJ ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :173-175

[3]

DECREMOUX B, 1979, 1978 P S GALL ARS RE, P52

[4] LATTICE-CONSTANT, BANDGAP, THICKNESS, AND SURFACE-MORPHOLOGY OF INGAASP-INP LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, SUPERCOOLING AND 2-PHASE-SOLUTION GROWTH TECHNIQUES [J].

FENG, M ;

COOK, LW ;

TASHIMA, MM ;

STILLMAN, GE .

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[5] INFLUENCE OF LPE GROWTH TECHNIQUES ON THE ALLOY COMPOSITION OF INGAASP [J].

FENG, M ;

COOK, LW ;

TASHIMA, MM ;

WINDHORN, TH ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1979, 34 (04) :292-295

[6]

HSIEH JJ, 1977, 1976 P S GALL ARS B, V33, P74

[7]

MOON RL, 1974, J CRYST GROWTH, V27, P62

[8] COMPOSITIONAL INHOMOGENEITY OF LIQUID-PHASE EPITAXIAL INGAPAS LAYERS OBSERVED DIRECTLY IN PHOTO-LUMINESCENCE [J].

REZEK, EA ;

VOJAK, BA ;

CHIN, R ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :744-746

[9] ISOTHERMAL DIFFUSION-THEORY OF LPE - GAAS, GAP, BUBBLE GARNET [J].

RODE, DL .

JOURNAL OF CRYSTAL GROWTH, 1973, 20 (01) :13-23

[10]

Tiller W. A., 1968, Journal of Crystal Growth, V2, P345, DOI 10.1016/0022-0248(68)90027-4

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