LIQUID-PHASE EPITAXIAL-GROWTH OF INP AND INGAASP ALLOYS

被引：25

作者：

GROVES, SH

PLONKO, MC

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 54卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90253-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：81 / 87

页数：7

相关论文

共 18 条

[1] INTERBAND MAGNETOABSORPTION OF IN0.53GA0.47AS
ALAVI, K
AGGARWAL, RL
GROVES, SH
[J]. PHYSICAL REVIEW B, 1980, 21 (03): : 1311 - 1315
[2] IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP
ARMIENTO, CA
GROVES, SH
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 333 - 335
[3] BURRUS CA, 1979, ELECTRON LETT, V15, P656
[4] CONTROL OF SUBSTRATE DEGRADATION IN INP LPE GROWTH WITH PH3 PARTIAL-PRESSURE
CLAWSON, AR
LUM, WY
MCWILLIAMS, GE
[J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (02) : 300 - 303
[5] AVALANCHE MULTIPLICATION AND NOISE CHARACTERISTICS OF LOW-DARK-CURRENT GAINASP-INP AVALANCHE PHOTODETECTORS
DIADIUK, V
GROVES, SH
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 807 - 810
[6] GROVES SH, 1979, I PHYS C SER, V45, P71
[7] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
ROSSI, JA
DONNELLY, JP
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711
[8] GAINASP-INP AVALANCHE PHOTO-DIODES
HURWITZ, CE
HSIEH, JJ
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 487 - 489
[9] MESSHAM R, 1979, ELECTRONIC MATERIALS
[10] Mullin J. B., 1972, Journal of Crystal Growth, V13-14, P640, DOI 10.1016/0022-0248(72)90534-9