INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS GROWN BY ATMOSPHERIC-PRESSURE MOCVD

[1] ALGAAS-GAAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - A REVIEW [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 213 - 222

[2] Hirtz J. P., 1982, GaInAsP alloy semiconductors, P61

[3] GAXIN1-XASVP1-V-INP DH LASER EMITTING AT 1.15 MU-M GROWN BY LOW-PRESSURE METALORGANIC CVD [J]. ELECTRONICS LETTERS, 1980, 16 (08) : 275 - 277

[4] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 283 - 285

[5] LUDOWISE MJ, 1983, INST PHYS CONF SER, P93

[6] METALORGANIC INP AND INXGA1-XASYP1-Y ON INP EPITAXY AT ATMOSPHERIC-PRESSURE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (03) : 603 - 620

[7] LOW-THRESHOLD 1.25-MU-M VAPOR-GROWN INGAASP CW LASERS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 262 - 264

[8] GAINASP INP HETEROSTRUCTURE LASERS EMITTING AT 1.5-MU-M AND GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 785 - 787

[9] 1.5 MU-M ROOM-TEMPERATURE PULSED OPERATION OF GAINASP-INP DOUBLE HETEROSTRUCTURE GROWN BY LP MOCVD [J]. ELECTRONICS LETTERS, 1981, 17 (18) : 643 - 642

[10] RAZEGHI M, 1984, UNPUB J CRYST GROWTH, V67

[1] ALGAAS-GAAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - A REVIEW [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 213 - 222

[2] Hirtz J. P., 1982, GaInAsP alloy semiconductors, P61

[3] GAXIN1-XASVP1-V-INP DH LASER EMITTING AT 1.15 MU-M GROWN BY LOW-PRESSURE METALORGANIC CVD [J]. ELECTRONICS LETTERS, 1980, 16 (08) : 275 - 277

[4] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 283 - 285

[5] LUDOWISE MJ, 1983, INST PHYS CONF SER, P93

[6] METALORGANIC INP AND INXGA1-XASYP1-Y ON INP EPITAXY AT ATMOSPHERIC-PRESSURE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (03) : 603 - 620

[7] LOW-THRESHOLD 1.25-MU-M VAPOR-GROWN INGAASP CW LASERS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 262 - 264

[8] GAINASP INP HETEROSTRUCTURE LASERS EMITTING AT 1.5-MU-M AND GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 785 - 787

[9] 1.5 MU-M ROOM-TEMPERATURE PULSED OPERATION OF GAINASP-INP DOUBLE HETEROSTRUCTURE GROWN BY LP MOCVD [J]. ELECTRONICS LETTERS, 1981, 17 (18) : 643 - 642

[10] RAZEGHI M, 1984, UNPUB J CRYST GROWTH, V67