GAINASP INP HETEROSTRUCTURE LASERS EMITTING AT 1.5-MU-M AND GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：28

作者：

PANISH, MB

TEMKIN, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 08期

关键词：

D O I：

10.1063/1.94918

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：785 / 787

页数：3

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