HIGH-QUALITY INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：46

作者：

TSANG, WT

MILLER, RC

CAPASSO, F

BONNER, WA

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 05期

关键词：

D O I：

10.1063/1.93534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：467 / 469

页数：3

相关论文

共 14 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP HOMOEPITAXIAL LAYERS AND THEIR ELECTRICAL AND OPTICAL-PROPERTIES
ASAHI, H
KAWAMURA, Y
IKEDA, M
OKAMOTO, H
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2852 - 2859
[2] BURKHARD H, 1981, 8TH P INT S GALL ARS, P659
[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN
CHENG, KY
CHO, AY
WAGNER, WR
BONNER, WA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021
[4] DIGUISEPPE MA, UNPUB
[5] CHARACTERIZATION OF HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY
DINGLE, R
WEISBUCH, C
STORMER, HL
MORKOC, H
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 507 - 510
[6] LIQUID-PHASE EPITAXY OF INP
HESS, K
STATH, N
BENZ, KW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1208 - 1212
[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP
MCFEE, JH
MILLER, BI
BACHMANN, KJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 259 - 272
[8] MILLER BI, 1978, J ELECTROCHEM SOC, V125, P1309
[9] Miller R, UNPUB
[10] MOLECULAR COMPOSITION OF ALKALI HALIDE VAPORS
MILLER, RC
KUSCH, P
[J]. JOURNAL OF CHEMICAL PHYSICS, 1956, 25 (05) : 860 - 876