CHARACTERIZATION OF HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：66

作者：

DINGLE, R

WEISBUCH, C

STORMER, HL

MORKOC, H

CHO, AY

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 06期

关键词：

D O I：

10.1063/1.93159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：507 / 510

页数：4

共 21 条

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