REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALX GA1-X AS HETEROSTRUCTURE LASERS BY SEPARATE OPTICAL AND CARRIER CONFINEMENT

被引：36

作者：

PANISH, MB ^{[1
]}

CASEY, HC ^{[1
]}

SUMSKI, S ^{[1
]}

FOY, PW ^{[1
]}

机构：

[1] BELL TEL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 11期

关键词：

D O I：

10.1063/1.1654518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：590 / 591

页数：2

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共 20 条

[1] Alferov Zh. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1826
[2] ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1573
[3] ALFEROV ZI, 1970, SOV PHYS SEMICOND, V3, P1107
[4] [Anonymous], 1969, FIZ TEKHNIKA POLUPRO
[5] CASEY HW, UNPUBLISHED
[6] DAWSON LR, UNPUBLISHED
[7] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
HAYASHI, I
PANISH, MB
FOY, PW
SUMSKI, S
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 109 - &
[8] HAYASHI I, 1970, J APPL PHYS, V41, P510
[9] HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211
[10] Hayashi L., 1972, US Patent, Patent No. [3691476, 3691476 3691476]