TEMPERATURE-DEPENDENCE OF IMPACT IONIZATION COEFFICIENTS IN INP

被引：56

作者：

TAGUCHI, K

TORIKAI, T

SUGIMOTO, Y

MAKITA, K

ISHIHARA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 02期

关键词：

D O I：

10.1063/1.336655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：476 / 481

页数：6

共 28 条

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[7] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

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[8] IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING [J].

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[9] HIGH-FIELD TRANSPORT IN INDIUM-PHOSPHIDE [J].

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[10]

KAO CW, 1980, SOLID STATE ELECTRON, V23, P881, DOI 10.1016/0038-1101(80)90106-9

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