IMPACT IONIZATION IN (100)-ORIENTED, (110)-ORIENTED, AND (111)-ORIENTED INP AVALANCHE PHOTO-DIODES

被引：53

作者：

ARMIENTO, CA ^{[1
]}

GROVES, SH ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 02期

关键词：

D O I：

10.1063/1.94279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：198 / 200

页数：3

共 25 条

[1] [Anonymous], 1977, SEMICONDUCTORS SEMIM
[2] IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP
ARMIENTO, CA
GROVES, SH
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 333 - 335
[3] ARMIENTO CA, 1983, THESIS MASSACHUSETTS
[4] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO
CAPASSO, F
TSANG, WT
HUTCHINSON, AL
WILLIAMS, GF
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40
[5] HOT-ELECTRON DYNAMICS IN GAAS AVALANCHE DEVICES - COMPETITION BETWEEN BALLISTIC BEHAVIOR AND INTERVALLEY SCATTERING
CAPASSO, F
NAHORY, RE
POLLACK, MA
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (11) : 977 - 979
[6] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
[7] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS
COOK, LW
BULMAN, GE
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 589 - 591
[8] AVALANCHE MULTIPLICATION AND NOISE CHARACTERISTICS OF LOW-DARK-CURRENT GAINASP-INP AVALANCHE PHOTODETECTORS
DIADIUK, V
GROVES, SH
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 807 - 810
[9] SURFACE PASSIVATION TECHNIQUES FOR INP AND INGAASP P-N-JUNCTION STRUCTURES
DIADIUK, V
ARMIENTO, CA
GROVES, SH
HURWITZ, CE
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 177 - 178
[10] DIFFUSION LENGTH OF MOLES IN N-INP
DIADIUK, V
GROVES, SH
ARMIENTO, CA
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 892 - 894

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