FORMATION OF INGAAS/GAAS QUANTUM DOTS BY SUBMONOLAYER MOLECULAR-BEAM EPITAXY

被引：16

作者：

GURYANOV, GM ^{[1
]}

CIRLIN, GE ^{[1
]}

PETROV, VN ^{[1
]}

POLYAKOV, NK ^{[1
]}

GOLUBOK, AO ^{[1
]}

TIPISSEV, SY ^{[1
]}

MUSIKHINA, EP ^{[1
]}

GUBANOV, VB ^{[1
]}

SAMSONENKO, YB ^{[1
]}

LEDENTSOV, NN ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI, AF IOFFE PHYS TECH INST, ST PETERSBURG 194021, RUSSIA

来源：

SURFACE SCIENCE | 1995年 / 331卷 / pt A期

关键词：

GALLIUM ARSENIDE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING SPECTROSCOPIES; SURFACE RELAXATION AND RECONSTRUCTION; SURFACE STRUCTURE; MORPHOLOGY; ROUGHNESS; AND TOPOGRAPHY;

D O I：

10.1016/0039-6028(95)00299-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have performed a scanning tunneling microscopy study of the formation of (In,Ga)As/GaAs and InAs/GaAs quantum dot and quantum wire arrays on GaAs(100) and vicinal surfaces during submonolayer molecular beam epitaxy. During the initial stage of strained layer transformation (similar to 2 monolayers of InAs) the formation of well ordered quantum wire arrays along the [001] direction is observed. Further deposition results in dots placed in rows and then in an array of well separated dots. This effect is more pronounced in the case of vicinal surfaces where the dots are oriented along the [001] direction despite the surface is misoriented towards the [0 - 11] direction. Our study provides a new insight into the process of quantum dot and quantum wire arrays formation on GaAs(100) and vicinal surfaces.

引用

页码：414 / 418

页数：5

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