DIRECT OBSERVATION OF THE GROWTH-INTERRUPTION EFFECT FOR MOLECULAR-BEAM-EPITAXY GROWTH ON GAAS(001) BY SCANNING TUNNELING MICROSCOPY

被引：48

作者：

IDE, T

YAMASHITA, A

MIZUTANI, T

机构：

[1] Microelectronics Research Laboratories NEC Corporation, Ibaraki 305, 34, Miyukigaoka

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.46.1905

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a scanning tunneling microscope, we examine the evolution of the surface configuration of GaAs(001) upon annealing after molecular-beam-epitaxy growth interruption. Soon after growth interruption, the surface exhibits many two-dimensional islands elongated along the [110BAR] direction and a ragged step configuration. Continuous annealing after growth interruption causes changes in the surface topography. Annealing for 2 min makes the surface very smooth by decreasing the number of islands and smoothing the step shapes. Further annealing for about 20 min causes step bunching. The decrease in the number of islands and smoothing of step shapes are explained by shortening of the total step length.

引用

收藏

页码：1905 / 1908

页数：4

相关论文

共 10 条

[1] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706

[2]

DAWERITZ L, 1990, J CRYST GROWTH, V111, P65

[3] PHOTOLUMINESCENCE FROM ALGAAS-GAAS SINGLE QUENTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

FUKUNAGA, T ;

KOBAYASHI, KLI ;

NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L510-L512

[4] OPTICAL INVESTIGATION OF INTERFACE ROUGHNESS AND DEFECT INCORPORATION IN GAAS/ALGAAS QUANTUM-WELLS GROWN WITH AND WITHOUT GROWTH INTERRUPTION [J].

GURIOLI, M ;

VINATTIERI, A ;

COLOCCI, M ;

BOSACCHI, A ;

FRANCHI, S .

APPLIED PHYSICS LETTERS, 1991, 59 (17) :2150-2152

[5] HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF GAAS/ALAS HETEROINTERFACES GROWN ON THE MISORIENTED SUBSTRATE IN THE (110) PROJECTION [J].

IKARASHI, N ;

SAKAI, A ;

BABA, T ;

ISHIDA, K ;

MOTOHISA, J ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1990, 57 (19) :1983-1985

[6] STRUCTURE OF GAAS(001) (2X4)-C(2X8) DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].

PASHLEY, MD ;

HABERERN, KW ;

FRIDAY, W ;

WOODALL, JM ;

KIRCHNER, PD .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2176-2179

[7] SCANNING TUNNELING MICROSCOPY COMPARISON OF GAAS(001) VICINAL SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

PASHLEY, MD ;

HABERERN, KW ;

GAINES, JM .

APPLIED PHYSICS LETTERS, 1991, 58 (04) :406-408

[8] THE (001) SURFACE OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS STUDIED BY SCANNING TUNNELING MICROSCOPY [J].

PASHLEY, MD ;

HABERERN, KW ;

WOODALL, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1468-1471

[9] ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY [J].

SAKAKI, H ;

TANAKA, M ;

YOSHINO, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L417-L420

[10] SCANNING TUNNELING MICROSCOPE EQUIPPED WITH A FIELD-ION MICROSCOPE [J].

SAKURAI, T ;

HASHIZUME, T ;

KAMIYA, I ;

HASEGAWA, Y ;

IDE, T ;

MIYAO, M ;

SUMITA, I ;

SAKAI, A ;

HYODO, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1684-1688