HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF GAAS/ALAS HETEROINTERFACES GROWN ON THE MISORIENTED SUBSTRATE IN THE (110) PROJECTION

被引：11

作者：

IKARASHI, N ^{[1
]}

SAKAI, A ^{[1
]}

BABA, T ^{[1
]}

ISHIDA, K ^{[1
]}

MOTOHISA, J ^{[1
]}

SAKAKI, H ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 19期

关键词：

D O I：

10.1063/1.103986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Edge-on observations of the structures of vicinal interfaces of GaAs/AlAs heterostructures were carried out by high-resolution electron microscopy. In order to observe the interfacial steps running along the 〈110〉 direction edge-on, we demonstrate the imaging conditions for high-resolution observations in the 〈110〉 projection. Under these conditions, the structures of GaAs/AlAs interfaces, which were grown on the vicinal (001) substrate tilted toward [110], are examined in the [1̄10] projection. The interfacial structures are imaged edge-on, so that the monolayer height steps were observed. The results reveal fluctuations of terrace width and the roughness of step edges on an atomic scale.

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页码：1983 / 1985

页数：3

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