MOLECULAR-BEAM EPITAXY GROWTH OF TILTED GAAS ALAS SUPERLATTICES BY DEPOSITION OF FRACTIONAL MONOLAYERS ON VICINAL (001) SUBSTRATES

被引：291

作者：

GAINES, JM ^{[1
]}

PETROFF, PM ^{[1
]}

KROEMER, H ^{[1
]}

SIMES, RJ ^{[1
]}

GEELS, RS ^{[1
]}

ENGLISH, JH ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1378 / 1381

页数：4

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