REDUCTION OF SURFACE-DEFECTS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：22

作者：

SALOKATVE, A

VARRIO, J

LAMMASNIEMI, J

ASONEN, H

PESSA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 17期

关键词：

D O I：

10.1063/1.98672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1340 / 1342

页数：3

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[1] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
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[2] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS
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[3] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798
[4] GAAS SUBSTRATE PREPARATION FOR OVAL-DEFECT ELIMINATION DURING MBE GROWTH
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[5] CLASSIFICATION AND ORIGINS OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) : 104 - 112
[6] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870
[7] INITIAL RESULTS OF A HIGH THROUGHPUT MBE SYSTEM FOR DEVICE FABRICATION
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 493 - 496
[8] SURFACE-MORPHOLOGY OF GAAS GROWN BY GAS-SOURCE MBE USING TRIMETHYLGALLIUM AND ARSENIC
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[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) : 521 - 524
[9] MORPHOLOGICAL-STUDIES OF OVAL DEFECTS IN GAAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 47 - 49
[10] AN INVESTIGATION OF GAAS FILMS GROWN BY MBE AT LOW SUBSTRATE TEMPERATURES AND GROWTH-RATES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 166 - 169