AN INVESTIGATION OF GAAS FILMS GROWN BY MBE AT LOW SUBSTRATE TEMPERATURES AND GROWTH-RATES

被引：33

作者：

METZE, GM

CALAWA, AR

MAVROIDES, JG

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：166 / 169

页数：4

共 7 条

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CHOW, R
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[2] SOURCE CONTAMINATION EFFECTS ON EPITAXY OF GE FILMS ON GE
DAVEY, JE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1965, 2 (01): : 12 - &
[3] LEWIS B, 1978, NUCLEATION GROWTH TH, P454
[4] METZE GM, UNPUB APPL PHYS LETT
[5] GROWTH TEMPERATURE-DEPENDENCE IN MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE
MUROTANI, T
SHIMANOE, T
MITSUI, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 302 - 308
[6] STALL RA, 1980, THESIS CORNELL U ITH
[7] WOOD CEC, 1978, GAAS RELATED COMPOUN, P28