SURFACE-MORPHOLOGY OF GAAS GROWN BY GAS-SOURCE MBE USING TRIMETHYLGALLIUM AND ARSENIC

被引：11

作者：

ISHIKAWA, H

KONDO, K

SASA, S

TANAKA, H

HIYAMIZU, S

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 76卷 / 02期

关键词：

D O I：

10.1016/0022-0248(86)90404-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：521 / 524

页数：4

共 17 条

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[2] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS
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ROCHER, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) : 531 - 538
[3] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
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CHOW, R
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798
[4] INITIAL RESULTS OF A HIGH THROUGHPUT MBE SYSTEM FOR DEVICE FABRICATION
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CHO, AY
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 493 - 496
[5] STRUCTURE-ANALYSIS OF OVAL DEFECT ON MOLECULAR-BEAM EPITAXIAL GAAS LAYER BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION
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NAGATA, F
KATAYAMA, Y
SHIRAKI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L846 - L848
[6] MBE GROWTH OF HIGH-QUALITY GAAS USING TRIETHYLGALLIUM AS A GALLIUM SOURCE
KONDO, K
ISHIKAWA, H
SASA, S
SUGIYAMA, Y
HIYAMIZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L52 - L53
[7] KONDO KK, 1986, I PHYS C SER, V79
[8] CLASSIFICATION OF SURFACE-DEFECTS ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY
NANBU, K
SAITO, J
ISHIKAWA, T
KONDO, K
SHIBATOMI, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : 601 - 604
[9] GAAS GROWTH IN METAL-ORGANIC MBE
PUTZ, N
VEUHOFF, E
HEINECKE, H
HEYEN, M
LUTH, H
BALK, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 671 - 673
[10] HILLOCK DEFECTS IN INGAAS/INP MULTI-LAYERS GROWN BY MBE
SAITO, H
BORLAND, JO
ASAHI, H
NAGAI, H
NAWATA, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (03) : 521 - 528

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