STRUCTURE-ANALYSIS OF OVAL DEFECT ON MOLECULAR-BEAM EPITAXIAL GAAS LAYER BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION

被引：37

作者：

KAKIBAYASHI, H

NAGATA, F

KATAYAMA, Y

SHIRAKI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 11期

关键词：

D O I：

10.1143/JJAP.23.L846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L846 / L848

页数：3

相关论文

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