MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS

[1] ABRAHAMS MS, 1965, J APPL PHYS, V36, P954

[2] FORMULAE FOR THE TRANSFORMATION OF INDICES IN TWINNED CRYSTALS [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1955, 6 (03): : 92 - 96

[3] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128): : 301 - &

[4] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798

[5] Cho A. Y., 1975, PROGR SOLID STATE CH

[6] ORIENTED GROWTH OF SEMICONDUCTORS .V. SURFACE FEATURES AND TWINS IN EPITAXIAL GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2893 - &

[7] Joyce B. A., 1968, Journal of Crystal Growth, V3-4, P43, DOI 10.1016/0022-0248(68)90100-0

[8] JOYCE BA, 1981, UNPUB 1ST EUR MBE WO

[9] SHALLOW DEFECT ETCHING OF GAAS USING AB SOLUTION UNDER LASER ILLUMINATION [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) : 239 - 248

[10] PREPARATION OF CARBON-FREE GAAS-SURFACES - AES AND RHEED ANALYSIS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 149 - 153

[1] ABRAHAMS MS, 1965, J APPL PHYS, V36, P954

[2] FORMULAE FOR THE TRANSFORMATION OF INDICES IN TWINNED CRYSTALS [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1955, 6 (03): : 92 - 96

[3] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128): : 301 - &

[4] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798

[5] Cho A. Y., 1975, PROGR SOLID STATE CH

[6] ORIENTED GROWTH OF SEMICONDUCTORS .V. SURFACE FEATURES AND TWINS IN EPITAXIAL GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2893 - &

[7] Joyce B. A., 1968, Journal of Crystal Growth, V3-4, P43, DOI 10.1016/0022-0248(68)90100-0

[8] JOYCE BA, 1981, UNPUB 1ST EUR MBE WO

[9] SHALLOW DEFECT ETCHING OF GAAS USING AB SOLUTION UNDER LASER ILLUMINATION [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) : 239 - 248

[10] PREPARATION OF CARBON-FREE GAAS-SURFACES - AES AND RHEED ANALYSIS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 149 - 153