SHALLOW DEFECT ETCHING OF GAAS USING AB SOLUTION UNDER LASER ILLUMINATION

被引：16

作者：

MUNOZYAGUE, A

BAFLEUR, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 53卷 / 02期

关键词：

D O I：

10.1016/0022-0248(81)90071-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：239 / 248

页数：10

共 13 条

[1]

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[3]

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[7]

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ZAMEROWSKI, TJ .

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[9] ETCH PIT STUDIES OF GAP LIQUID-PHASE EPITAXIAL LAYERS [J].

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[10] EFFECTS OF ILLUMINATION ON PREFERENTIAL ETCHING OF N-TYPE GAAS IN A CRO3-HF-AGNO3 SOLUTION [J].

SAITOH, T ;

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