LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP

被引：101

作者：

EHRLICH, DJ

OSGOOD, RM

DEUTSCH, TF

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.91597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：698 / 700

页数：3

共 12 条

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[8] SELECTIVE PHOTOETCHING OF GALLIUM-ARSENIDE [J].

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