ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS

被引：90

作者：

WOOD, CEC ^{[1
]}

RATHBUN, L ^{[1
]}

OHNO, H ^{[1
]}

DESIMONE, D ^{[1
]}

机构：

[1] CORNELL UNIV, NATL RES & RESOURCE FACIL SUBMICRON STRUCT, ITHACA, NY 14853 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 51卷 / 02期

关键词：

D O I：

10.1016/0022-0248(81)90314-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：299 / 303

页数：5

共 9 条

[1] LOW-NOISE MICROWAVE FETS FABRICATED BY MOLECULAR-BEAM EPITAXY [J].

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COLLINS, DM ;

NISHIMOTO, CK .

ELECTRONICS LETTERS, 1979, 15 (08) :218-219

[2]

CHO A, 1978, PROGR SOLID STATE CH

[3]

CHO AY, 1979, COMMUNICATION AUG

[4] MOLECULAR-BEAM EPITAXY OF ALTERNATING METAL-SEMICONDUCTOR FILMS [J].

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CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1973, 23 (04) :201-203

[5] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE [J].

OHNO, H ;

BARNARD, J ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :154-155

[6] ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAAS [J].

STALL, R ;

WOOD, CEC ;

BOARD, K ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1979, 15 (24) :800-801

[7] LOW-CURRENT-THRESHOLD AND HIGH-LASING UNIFORMITY GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1979, 34 (07) :473-475

[8] MULTIDIELECTRICS FOR GAAS MIS DEVICES USING COMPOSITION-GRADED ALXGA1-XAS AND OXIDIZED AIAS [J].

TSANG, WT ;

OLMSTEAD, M ;

CHANG, RPH .

APPLIED PHYSICS LETTERS, 1979, 34 (06) :408-410

[9]

WOOD CEC, 1980, PHYS THIN FILMS, P35

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