MOLECULAR-BEAM EPITAXY OF ALTERNATING METAL-SEMICONDUCTOR FILMS

被引：87

作者：

LUDEKE, R ^{[1
]}

CHANG, LL ^{[1
]}

ESAKI, L ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 04期

关键词：

D O I：

10.1063/1.1654858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：201 / 203

页数：3

相关论文

共 7 条

[1] GROWTH OF A GAAS-GAAIAS SUPERLATTICE
CHANG, LL
ESAKI, L
HOWARD, WE
LUDEKE, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 11 - 16
[2] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &
[3] CUBIC PHASE IN VAPOR-DEPOSITED CDS FILMS
ESCOFFERY, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2273 - &
[4] GALLI G, 1968, ELECTROCHEM TECHNOL, V6, P358
[5] OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
JONA, F
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (5-6) : 375 - &
[6] STEVENSON GA, 1971, J MATER SCI, V6, P413, DOI 10.1007/BF02403061
[7] SUPERCONDUCTING PROPERTIES OF CRYSTALLINE ULTRATHIN FILMS
STRONGIN, M
KAMMERER, OF
FARRELL, HH
MILLER, DL
[J]. PHYSICAL REVIEW LETTERS, 1973, 30 (04) : 129 - 132