GAAS GROWTH IN METAL-ORGANIC MBE

被引：99

作者：

PUTZ, N ^{[1
]}

VEUHOFF, E ^{[1
]}

HEINECKE, H ^{[1
]}

HEYEN, M ^{[1
]}

LUTH, H ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] AACHEN TECH UNIV,SFB 202,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583210

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：671 / 673

页数：3

共 13 条

[1] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703
[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[3] HEINECKE H, 1984, J ELECTRON MATER, V13, P815, DOI 10.1007/BF02657928
[4] HOLLAN L, 1980, CURRENT TOPICS MATER, V5, P5
[5] KOPPITZ M, 1984, J CRYST GROWTH, V64, P136
[6] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY
LEYS, MR
VEENVLIET, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153
[7] LIN AL, 1977, 6TH P INT C CVD, P264
[8] A NEW APPROACH TO MOCVD OF INDIUM-PHOSPHIDE AND GALLIUM-INDIUM ARSENIDE
MOSS, RH
EVANS, JS
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 129 - 134
[9] PHOTOSTIMULATED GROWTH OF GAAS IN THE MOCVD SYSTEM
PUTZ, N
HEINECKE, H
VEUHOFF, E
ARENS, G
HEYEN, M
LUTH, H
BALK, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 194 - 199
[10] PUTZ N, 1983, 4TH P EUR C CHEM VAP, P103