PHOTOSTIMULATED GROWTH OF GAAS IN THE MOCVD SYSTEM

被引:44
作者
PUTZ, N [1 ]
HEINECKE, H [1 ]
VEUHOFF, E [1 ]
ARENS, G [1 ]
HEYEN, M [1 ]
LUTH, H [1 ]
BALK, P [1 ]
机构
[1] RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER
关键词
D O I
10.1016/0022-0248(84)90416-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:194 / 199
页数:6
相关论文
共 11 条
[1]  
Barin I., 1999, LANGES HDB CHEM, P625
[2]   CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTOR [J].
BENEKING, H ;
ESCOBOSA, A ;
KRAUTLE, H .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) :473-480
[3]   HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].
DAPKUS, PD ;
MANASEVIT, HM ;
HESS, KL ;
LOW, TS ;
STILLMAN, GE .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23
[4]   LASER PHOTODEPOSITION OF METAL-FILMS WITH MICROSCOPIC FEATURES [J].
DEUTSCH, TF ;
EHRLICH, DJ ;
OSGOOD, RM .
APPLIED PHYSICS LETTERS, 1979, 35 (02) :175-177
[5]  
ELJANI B, 1982, 1ST P INT M REL EP G
[6]  
HAIGH J, COMMUNICATION
[7]  
HEINECKE H, UNPUB
[8]   ON THE EFFECT OF CARRIER GAS ON GROWTH-CONDITIONS IN MOCVD REACTORS - RAMAN-STUDY OF LOCAL TEMPERATURE [J].
KOPPITZ, M ;
VESTAVIK, O ;
PLETSCHEN, W ;
MIRCEA, A ;
HEYEN, M ;
RICHTER, W .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :136-141
[9]  
ROTH W, 1982, P MRS ANN M BOSTON
[10]   STUDIES OF GAAS AND ALGAAS LAYERS GROWN BY OM-VPE [J].
SAXENA, RR ;
COOPER, CB ;
LUDOWISE, MJ ;
HIKIDO, S ;
SARDI, VM ;
BORDEN, PG .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :58-63