STUDIES OF GAAS AND ALGAAS LAYERS GROWN BY OM-VPE

被引：32

作者：

SAXENA, RR ^{[1
]}

COOPER, CB ^{[1
]}

LUDOWISE, MJ ^{[1
]}

HIKIDO, S ^{[1
]}

SARDI, VM ^{[1
]}

BORDEN, PG ^{[1
]}

机构：

[1] VARIAN ASSOCIATES,SOLID STATE LAB,PALO ALTO,CA 94303

来源：

关键词：

D O I：

10.1016/0022-0248(81)90271-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：58 / 63

页数：6

共 16 条

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[5] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR
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[6] HIRTZ JP, 1980 P NATO INP WORK
[7] LUDOWISE MJ, 22ND EL MAT C
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[9] Manasevit H. M., 1972, Journal of Crystal Growth, V13-14, P306, DOI 10.1016/0022-0248(72)90175-3
[10] PERFORMANCE OF AN AL0.92GA0.08AS-AL0.14GA0.86AS SOLAR-CELL IN CONCENTRATED SUNLIGHT
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