OM VPE GROWTH OF AIGASB AND ALGAASSB

被引：25

作者：

COOPER, CB

SAXENA, RR

LUDOWISE, MJ

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 23期

关键词：

D O I：

10.1049/el:19800636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：892 / 893

页数：2

共 10 条

[1] ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC [J].

COOPER, CB ;

LUDOWISE, MJ ;

AEBI, V ;

MOON, RL .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) :299-309

[2]

COOPER CB, 1980, 22ND EL MAT C ITH

[3]

FUKUI T, 1980, JPN J APPL PHYS, V19, P153

[4]

HIRTZ JP, 1980, 22ND EL MAT C ITH

[5] GROWTH OF ALSB ON INSULATING SUBSTRATES BY METAL ORGANICS CHEMICAL VAPOR-DEPOSITION [J].

LEROUX, M ;

TROMSONCARLI, A ;

GIBART, P ;

VERIE, C ;

BERNARD, C ;

SCHOULER, MC .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (03) :367-378

[6] SURVEY OF HETEROEPITAXIAL GROWTH OF SEMICONDUCTOR-FILMS ON INSULATING SUBSTRATES [J].

MANASEVIT, HM .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (02) :125-148

[7]

MANASEVIT HM, 1979, J ELECTROCHEM SOC, V126, P2031, DOI 10.1149/1.2128849

[8] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J].

MANASEVIT, HM .

APPLIED PHYSICS LETTERS, 1968, 12 (04) :156-+

[9] ORGANO-METALLIC-SOURCED VPE ALGAAS-GAAS CONCENTRATOR SOLAR-CELLS HAVING CONVERSION EFFICIENCIES OF 19-PERCENT [J].

NELSON, NJ ;

JOHNSON, KK ;

MOON, RL ;

VANDERPLAS, HA ;

JAMES, LW .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :26-27

[10] ORGANOMETALLIC VPE GROWTH OF A1XGA1-XAS [J].

STRINGFELLOW, GB ;

HALL, HT .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :201-226

← 1 →