INITIAL RESULTS OF A HIGH THROUGHPUT MBE SYSTEM FOR DEVICE FABRICATION

[1] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798

[2] GROWTH OF EXTREMELY UNIFORM LAYERS BY ROTATING SUBSTRATE HOLDER WITH MOLECULAR-BEAM EPITAXY FOR APPLICATIONS TO ELECTRO-OPTIC AND MICROWAVE DEVICES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 360 - 362

[3] GARBINSKI PA, UNPUB

[4] HEWITT BS, 1977, I PHYS C SER A, V33, P246

[5] HWANG JCM, 1982, SOLID STATE TECHNOL, V25, P166

[6] PERFORMANCE OF POWER FETS FABRICATED ON MBE-GROWN GAAS-LAYERS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 320 - 321

[7] HWANG JH, UNPUB

[8] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1103 - &

[9] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[10] HIGH-PURITY GAAS AND CR-DOPED GAAS EPITAXIAL LAYERS BY MBE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6413 - 6416

[1] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798

[2] GROWTH OF EXTREMELY UNIFORM LAYERS BY ROTATING SUBSTRATE HOLDER WITH MOLECULAR-BEAM EPITAXY FOR APPLICATIONS TO ELECTRO-OPTIC AND MICROWAVE DEVICES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 360 - 362

[3] GARBINSKI PA, UNPUB

[4] HEWITT BS, 1977, I PHYS C SER A, V33, P246

[5] HWANG JCM, 1982, SOLID STATE TECHNOL, V25, P166

[6] PERFORMANCE OF POWER FETS FABRICATED ON MBE-GROWN GAAS-LAYERS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 320 - 321

[7] HWANG JH, UNPUB

[8] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1103 - &

[9] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

[10] HIGH-PURITY GAAS AND CR-DOPED GAAS EPITAXIAL LAYERS BY MBE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6413 - 6416