PERFORMANCE OF POWER FETS FABRICATED ON MBE-GROWN GAAS-LAYERS

被引：5

作者：

HWANG, JCM

FLAHIVE, PG

WEMPLE, SH

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 10期

关键词：

D O I：

10.1109/EDL.1982.25584

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：320 / 321

页数：2

共 9 条

[1] LOW-NOISE AND HIGH-POWER GAAS MICROWAVE FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

DILORENZO, JV ;

HEWITT, BS ;

NIEHAUS, WC ;

SCHLOSSER, WO ;

RADICE, C .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :346-349

[2]

DASARO LA, 1981, I PHYS C SER, V56, P267

[3]

HWANG JCM, 825233315 BELL LABS

[4]

NIEHAUS WC, 1982, GAAS FET PRINCIPLES

[5]

NIEHAUS WC, 1977, I PHYS C SER B, V33, P271

[6]

WATAZE M, 1978, ELECTRON LETT, V15, P759

[7] CONTROL OF GATE-DRAIN AVALANCHE IN GAAS-MESFETS [J].

WEMPLE, SH ;

NIEHAUS, WC ;

COX, HM ;

DILORENZO, JV ;

SCHLOSSER, WO .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1013-1018

[8]

WEMPLE SH, 1981, GALLIUM ARSENIDE REL

[9]

Zemack D., 1981, International Electron Devices Meeting, P672

← 1 →