CONTROL OF GATE-DRAIN AVALANCHE IN GAAS-MESFETS

被引：82

作者：

WEMPLE, SH

NIEHAUS, WC

COX, HM

DILORENZO, JV

SCHLOSSER, WO

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/T-ED.1980.19979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1013 / 1018

页数：6

共 9 条

[1] MOBILITY, TRANSIT-TIME AND TRANSCONDUCTANCE IN SUBMICROMETER-GATE-LENGTH MESFETS [J].

FREY, J ;

WADA, T .

ELECTRONICS LETTERS, 1979, 15 (01) :26-27

[2] POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE [J].

FUKUTA, M ;

SUYAMA, K ;

SUZUKI, H ;

NAKAYAMA, Y ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :312-317

[3] 2-DIMENSIONAL ANALYSIS OF GALLIUM-ARSENIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS [J].

HIMSWORTH, B .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1353-+

[4] 2-DIMENSIONAL ANALYSIS OF SUBSTRATE EFFECTS IN JUNCTION FETS [J].

REISER, M .

ELECTRONICS LETTERS, 1970, 6 (16) :493-&

[5] MAXIMUM ELECTRIC-FIELD IN HIGH-FIELD DOMAIN [J].

SHUR, M .

ELECTRONICS LETTERS, 1978, 14 (16) :521-522

[6]

SHUR MS, 1978, IEDM, P381

[7] ANALYSIS OF FIELD DISTRIBUTIONS IN A GAAS MESFET AT LARGE DRAIN VOLTAGES [J].

SONE, J ;

TAKAYAMA, Y .

ELECTRONICS LETTERS, 1976, 12 (23) :622-624

[8]

WARRINER RA, 1977, SOLID STATE ELECTRON, V1, P105

[9] 2-DIMENSIONAL NUMERICAL-ANALYSIS OF STABILITY-CRITERIA OF GAAS FETS [J].

YAMAGUCHI, K ;

ASAI, S ;

KODERA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) :1283-1290

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