CLASSIFICATION OF SURFACE-DEFECTS ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：38

作者：

NANBU, K

SAITO, J

ISHIKAWA, T

KONDO, K

SHIBATOMI, A

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期

关键词：

D O I：

10.1149/1.2108627

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：601 / 604

页数：4

共 10 条

[1] MORPHOLOGICAL DEFECTS ARISING DURING MBE GROWTH OF GAAS
BACHRACH, RZ
KRUSOR, BS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 756 - 764
[2] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS
BAFLEUR, M
MUNOZYAGUE, A
ROCHER, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) : 531 - 538
[3] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
CHAI, YG
CHOW, R
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798
[4] INITIAL RESULTS OF A HIGH THROUGHPUT MBE SYSTEM FOR DEVICE FABRICATION
HWANG, JCM
BRENNAN, TM
CHO, AY
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 493 - 496
[5] AN INVESTIGATION OF GAAS FILMS GROWN BY MBE AT LOW SUBSTRATE TEMPERATURES AND GROWTH-RATES
METZE, GM
CALAWA, AR
MAVROIDES, JG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 166 - 169
[6] THE MBE GROWTH OF GAAS FREE OF OVAL DEFECTS
PETTIT, GD
WOODALL, JM
WRIGHT, SL
KIRCHNER, PD
FREEOUF, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 241 - 242
[7] SAITO J, UNPUB
[8] ELECTRICAL-PROPERTIES OF OVAL DEFECTS IN GAAS GROWN BY MBE
SHINOHARA, M
ITO, T
WADA, K
IMAMURA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L371 - L373
[9] SURFACE-DEFECTS ON MBE-GROWN GAAS
SUZUKI, Y
SEKI, M
HORIKOSHI, Y
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02): : 164 - 167
[10] ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS
WOOD, CEC
RATHBUN, L
OHNO, H
DESIMONE, D
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) : 299 - 303

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