MBE GROWTH OF HIGH-QUALITY GAAS USING TRIETHYLGALLIUM AS A GALLIUM SOURCE

被引：16

作者：

KONDO, K

ISHIKAWA, H

SASA, S

SUGIYAMA, Y

HIYAMIZU, S

机构：

[1] Fujitsu Lab Ltd, Atsugi, Jpn, Fujitsu Lab Ltd, Atsugi, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 01期

关键词：

ARSENIC - MOLECULAR BEAM EPITAXY - ORGANOMETALLICS;

D O I：

10.1143/JJAP.25.L52

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality GaAs was grown by gas source MBE using TEGa (triethylgallium) and metal arsenic. An unintentionally doped GaAs layer (6. 5 mu m thick) exhibited p-type conduction with the carrier concentration as low as 8 multiplied by 10**1**4cm** minus **3 (room temperature) and highest hole mobility of 5930 cm**2/Vs (39 K). The carrier concentration in GaAs obtained is the lowest ever reported for GaAs grown by gas source MBE or MO-MBE.

引用

页码：L52 / L53

页数：2

共 7 条

[1] HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS [J].