THE USE OF SI AND BE IMPURITIES FOR NOVEL PERIODIC DOPING STRUCTURES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：117

作者：

PLOOG, K

FISCHER, A

KUNZEL, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 02期

关键词：

D O I：

10.1149/1.2127430

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：400 / 410

页数：11

共 38 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J].

CHANDRA, A ;

WOOD, CEC ;

WOODARD, DW ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1979, 22 (07) :645-650

[3] GROWTH OF A GAAS-GAAIAS SUPERLATTICE [J].

CHANG, LL ;

ESAKI, L ;

HOWARD, WE ;

LUDEKE, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01) :11-16

[4]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[5] GAAS IMPATT DIODES PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

DUNN, CN ;

KUVAS, RL ;

SCHROEDER, WE .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :224-226

[6] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[7] GROWTH OF PERIODIC STRUCTURES BY MOLECULAR-BEAM METHOD [J].

CHO, AY .

APPLIED PHYSICS LETTERS, 1971, 19 (11) :467-&

[8]

COVINGTON DW, 1978, ELECTRON LETT, V14, P753

[9]

DINGLE R, UNPUBLISHED

[10] ELECTRON STATES IN CRYSTALS WITH NIPI-SUPERSTRUCTURE [J].

DOHLER, GH .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 52 (01) :79-&

← 1 2 3 4 →