CHEMICAL BEAM EPITAXY OF INGAAS

[1] BONNEVIE D, 1982, J PHYS PARIS, P445

[2] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER [J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 607 - 609

[4] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6328 - 6330

[5] METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1982, 12 : 243 - 269

[6] DUPUIS RD, 1983, P S 3 5 OPTOELECTRON, P175

[7] A NEW LOW-TEMPERATURE III-V MULTILAYER GROWTH TECHNIQUE - VACUUM METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6939 - 6343

[8] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4543 - 4552

[9] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAINAS USING TRIMETHYLINDIUM [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 550 - 552

[10] THE GROWTH AND CHARACTERIZATION OF UNIFORM GA1-XINXAS (X LESS-THAN-OR-EQUAL-TO .25) BY ORGANO-METALLIC VPE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) : 1051 - 1068

[1] BONNEVIE D, 1982, J PHYS PARIS, P445

[2] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER [J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 607 - 609

[4] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6328 - 6330

[5] METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1982, 12 : 243 - 269

[6] DUPUIS RD, 1983, P S 3 5 OPTOELECTRON, P175

[7] A NEW LOW-TEMPERATURE III-V MULTILAYER GROWTH TECHNIQUE - VACUUM METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6939 - 6343

[8] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4543 - 4552

[9] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAINAS USING TRIMETHYLINDIUM [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 550 - 552

[10] THE GROWTH AND CHARACTERIZATION OF UNIFORM GA1-XINXAS (X LESS-THAN-OR-EQUAL-TO .25) BY ORGANO-METALLIC VPE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) : 1051 - 1068