A NEW LOW-TEMPERATURE III-V MULTILAYER GROWTH TECHNIQUE - VACUUM METALORGANIC CHEMICAL VAPOR-DEPOSITION

[1] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[2] SIMPLIFIED FABRICATION OF GAAS HOMOJUNCTION SOLAR-CELLS WITH INCREASED CONVERSION EFFICIENCIES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 390 - 392

[3] Fraas L. M., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P886

[4] MCFEE JH, 1977, J ELECTROCHEMICAL SO, V124, P256

[5] UNIVERSAL STAIN-ETCHANT FOR INTERFACES IN III-V COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 5112 - 5114

[6] Seaman C. H., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P494

[7] Shay J. L., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P540

[8] ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 656 - 658

[9] AN ELECTROPOLISHING TECHNIQUE FOR GERMANIUM AND SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 412 - 419

[10] HIGH-THROUGH-PUT, HIGH-YIELD, AND HIGHLY-REPRODUCIBLE (ALGA)AS DOUBLE-HETEROSTRUCTURE LASER WAFERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 587 - 589

[1] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[2] SIMPLIFIED FABRICATION OF GAAS HOMOJUNCTION SOLAR-CELLS WITH INCREASED CONVERSION EFFICIENCIES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 390 - 392

[3] Fraas L. M., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P886

[4] MCFEE JH, 1977, J ELECTROCHEMICAL SO, V124, P256

[5] UNIVERSAL STAIN-ETCHANT FOR INTERFACES IN III-V COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 5112 - 5114

[6] Seaman C. H., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P494

[7] Shay J. L., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P540

[8] ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 656 - 658

[9] AN ELECTROPOLISHING TECHNIQUE FOR GERMANIUM AND SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 412 - 419

[10] HIGH-THROUGH-PUT, HIGH-YIELD, AND HIGHLY-REPRODUCIBLE (ALGA)AS DOUBLE-HETEROSTRUCTURE LASER WAFERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 587 - 589