HIGH-THROUGH-PUT, HIGH-YIELD, AND HIGHLY-REPRODUCIBLE (ALGA)AS DOUBLE-HETEROSTRUCTURE LASER WAFERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：23

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 08期

关键词：

D O I：

10.1063/1.92464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：587 / 589

页数：3

相关论文

共 5 条

[1] EFFECT OF ACCELERATED-GROWTH RATE (1-5 MU-M-H) ON MOLECULAR-BEAM EPITAXIAL GAAS USING SI AS A DOPANT
CHAI, YG
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 379 - 382
[2] CHO AY, UNPUBLISHED
[3] VERY LOW CURRENT THRESHOLD GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 11 - 14
[4] LOW-CURRENT-THRESHOLD AND HIGH-LASING UNIFORMITY GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (07) : 473 - 475
[5] INFRARED-VISIBLE (0.89-0.72 MU-M) ALXGA1-XAS-ALYGA1-YAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 917 - 919