INFRARED-VISIBLE (0.89-0.72 MU-M) ALXGA1-XAS-ALYGA1-YAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：29

作者：

TSANG, WT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 02期

关键词：

D O I：

10.1063/1.327668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：917 / 919

页数：3

共 12 条

[1] PREPARATION AND PROPERTIES OF GAAS DEVICES BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :435-442

[2] PULSED ROOM-TEMPERATURE OPERATION OF IN1-XGAXP1-ZASZ DOUBLE HETEROJUNCTION LASERS AT HIGH-ENERGY (6470 A, 1.916 EV) [J].

COLEMAN, JJ ;

HOLONYAK, N ;

LUDOWISE, MJ ;

WRIGHT, PD ;

CHIN, R ;

GROVES, WO ;

KEUNE, DL .

APPLIED PHYSICS LETTERS, 1976, 29 (03) :167-169

[3] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1977, 31 (12) :839-841

[4] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

ILEGEMS, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1278-1287

[5] NEW HETEROISOLATION STRIPE-GEOMETRY VISIBLE LIGHT EMITTING LASERS [J].

ITOH, K ;

INOUE, M ;

TERAMOTO, I .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :421-426

[6] TRANSVERSE-MODE STABILIZED GA1-XALXAS VISIBLE DIODE-LASERS [J].

KAJIMURA, T ;

KURODA, T ;

YAMASHITA, S ;

NAKAMURA, M ;

UMEDA, J .

APPLIED OPTICS, 1979, 18 (11) :1812-1815

[7] RED-LIGHT-EMITTING LASER-DIODES OPERATING CW AT ROOM-TEMPERATURE [J].

KRESSEL, H ;

HAWRYLO, FZ .

APPLIED PHYSICS LETTERS, 1976, 28 (10) :598-600

[8]

Ladany I., 1976, International Electron Devices Meeting. (Technical digest), P129

[9] ALYGA1-YAS-ALXGA1-X AS LASER STRUCTURES FOR INTEGRATED-OPTICS GROWN BY MOLECULAR-BEAM EPITAXY [J].

REINHART, FK ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :457-459

[10] CURRENT INJECTION GAAS-ALXGA1-XAS MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT ;

WEISBUCH, C ;

MILLER, RC ;

DINGLE, R .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :673-675

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