ELIMINATION OF OVAL DEFECTS IN EPILAYERS BY USING CHEMICAL BEAM EPITAXY

被引：45

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 11期

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D O I：

10.1063/1.95770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1086 / 1088

页数：3

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[8] THE MBE GROWTH OF GAAS FREE OF OVAL DEFECTS
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