MORPHOLOGY OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：64

作者：

STALL, RA ^{[1
]}

ZILKO, J ^{[1
]}

SWAMINATHAN, V ^{[1
]}

SCHUMAKER, N ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：524 / 527

页数：4

共 10 条

[1] PHOTOEMISSION-STUDIES OF ALXGA1-XAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHIANG, TC ;

LUDEKE, R ;

EASTMAN, DE .

PHYSICAL REVIEW B, 1982, 25 (10) :6518-6521

[2] GROWTH OF AL0.3GA0.7AS BY MOLECULAR-BEAM EPITAXY IN THE FORBIDDEN TEMPERATURE-RANGE USING AS-2 [J].

ERICKSON, LP ;

MATTORD, TJ ;

PALMBERG, PW ;

FISCHER, R ;

MORKOC, H .

ELECTRONICS LETTERS, 1983, 19 (16) :632-633

[3]

FISHER R, 1983, J APPL PHYS, V54, P2508

[4]

HONG CS, 1982, I PHYS C SER, V65, P297

[5] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE MORPHOLOGY OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MORKOC, H ;

DRUMMOND, TJ ;

KOPP, W ;

FISCHER, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) :824-826

[6] IMPROVED PHOTO-LUMINESCENCE OF ORGANO-METALLIC VAPOR-PHASE EPITAXIAL ALGAAS USING A NEW GETTERING TECHNIQUE ON THE ARSINE SOURCE [J].

SHEALY, JR ;

KREISMANIS, VG ;

WAGNER, DK ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :83-85

[7] EFFECT OF SUBSTRATE-TEMPERATURE ON THE CURRENT THRESHOLD OF GAAS-ALXGA1-X AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT ;

REINHART, FK ;

DITZENBERGER, JA .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :118-120

[8] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :786-788

[9] TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

WOOD, CEC ;

JOYCE, BA .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) :4854-4861

[10] ON THE ORIGIN AND ELIMINATION OF MACROSCOPIC DEFECTS IN MBE FILMS [J].

WOOD, CEC ;

RATHBUN, L ;

OHNO, H ;

DESIMONE, D .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :299-303

← 1 →