IMPROVED PHOTO-LUMINESCENCE OF ORGANO-METALLIC VAPOR-PHASE EPITAXIAL ALGAAS USING A NEW GETTERING TECHNIQUE ON THE ARSINE SOURCE

被引：50

作者：

SHEALY, JR ^{[1
]}

KREISMANIS, VG ^{[1
]}

WAGNER, DK ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 01期

关键词：

D O I：

10.1063/1.93735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：83 / 85

页数：3

共 8 条

[1]

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[2] A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD [J].

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[4] PHOTO-LUMINESCENCE INVESTIGATION OF RESIDUAL SHALLOW ACCEPTORS IN ALXGA1-X AS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

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[5] A NEW TECHNIQUE FOR GETTERING OXYGEN AND MOISTURE FROM GASES USED IN SEMICONDUCTOR PROCESSING [J].

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APPLIED PHYSICS LETTERS, 1982, 41 (01) :88-90

[6] PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN EPITAXIAL ALXGA1-XAS [J].

STRINGFELLOW, GB ;

LINNEBACH, R .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2212-2217

[7]

TSAI MJ, 1982, SEP GAAS REL COMP S

[8] PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

WICKS, G ;

WANG, WI ;

WOOD, CEC ;

EASTMAN, LF ;

RATHBUN, L .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5792-5796

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