PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：124

作者：

WICKS, G ^{[1
]}

WANG, WI ^{[1
]}

WOOD, CEC ^{[1
]}

EASTMAN, LF ^{[1
]}

RATHBUN, L ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1063/1.329470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5792 / 5796

页数：5

共 13 条

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[9] VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS, GA1-XALXAS AND RELATED-COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY
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