ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：36

作者：

AKIMOTO, K

DOHSEN, M

ARAI, M

WATANABE, N

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 73卷 / 01期

关键词：

D O I：

10.1016/0022-0248(85)90337-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：117 / 122

页数：6

共 17 条

[1]

AKIMOTO K, 1983, APPL PHYS LETT, V43, P1062, DOI 10.1063/1.94236

[2] INFRARED-ABSORPTION AND LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

AKIMOTO, K ;

DOHSEN, M ;

ARAI, M ;

WATANABE, N .

APPLIED PHYSICS LETTERS, 1984, 45 (09) :922-924

[3] MASS SPECTRUM OF GALLIUM VAPOR [J].

ANTKIW, S ;

DIBELER, VH .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (10) :1890-1891

[4] SPATIALLY RESOLVED PHOTOLUMINESCENCE AT OVAL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS [J].

BAFLEUR, M ;

MUNOZYAGUE, A ;

LAURET, N ;

BRABANT, JC .

JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) :472-474

[5] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS [J].

BAFLEUR, M ;

MUNOZYAGUE, A ;

ROCHER, A .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) :531-538

[6] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHAI, YG ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :796-798

[7] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5118-5123

[8] THERMODYNAMIC STUDIES OF SOME GASEOUS METALLIC CARBIDES [J].

CHUPKA, WA ;

BERKOWITZ, J ;

GIESE, CF ;

INGHRAM, MG .

JOURNAL OF PHYSICAL CHEMISTRY, 1958, 62 (05) :611-614

[9] PRESSURE OF GA2O OVER GALLIUM-GA2O3 MIXTURES [J].

FROSCH, CJ ;

THURMOND, CD .

JOURNAL OF PHYSICAL CHEMISTRY, 1962, 66 (05) :877-&

[10] ORIGIN OF SURFACE-DEFECTS ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS [J].

ITO, T ;

SHINOHARA, M ;

IMAMURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L524-L526

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